Model Code (Capacity) 1)
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MZ-V9E1T0BW
General Feature
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APPLICATION
Client PCs
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FORM FACTOR
M.2 (2280)
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INTERFACE
PCIe® 4.0 x4 / 5.0 x2 NVMe™ 2.0
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DIMENSION (WxHxD)
80x22x2.38mm
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WEIGHT
Max 9.0g Weight
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STORAGE MEMORY
Samsung V-NAND TLC
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CONTROLLER
Samsung in-house Controller
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CACHE MEMORY
HMB (Host Memory Buffer)
Special Feature
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TRIM SUPPORT
Supported
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SMART SUPPORT
Supported
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GC (GARBAGE COLLECTION)
Auto Garbage Collection Algorithm
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ENCRYPTION SUPPORT
AES 256-bit Encryption (Class 0) TCG/Opal IEEE1667 (Encrypted drive)
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WWN SUPPORT
Not supported
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DEVICE SLEEP MODE SUPPORT
Yes
Performance 2)
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SEQUENTIAL READ
1TB: Up to 5,000 MB/s
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SEQUENTIAL WRITE
1TB: Up to 4,200 MB/s
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RANDOM READ (4KB, QD32)
1TB: Up to 680,000 IOPS
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RANDOM WRITE (4KB, QD32)
1TB: Up to 800,000 IOPS
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RANDOM READ (4KB, QD1)
1TB: Up to 20,000 IOPS
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RANDOM WRITE (4KB, QD1)
1TB: Up to 90,000 IOPS
Environment
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AVERAGE POWER CONSUMPTION
(SYSTEM LEVEL) 3)1TB: Average: Read 4.9 W / Write 4.5 W
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POWER CONSUMPTION (IDLE) 3)
1TB: Typical 60 mW
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POWER CONSUMPTION (DEVICE SLEEP)
1TB: Typical 5 mW
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ALLOWABLE VOLTAGE
3.3 V ± 5% Allowable voltage
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RELIABILITY (MTBF)
1.5 Million Hours Reliability (MTBF)
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OPERATING TEMPERATURE
0 - 70 ℃ Operating Temperature
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SHOCK
1,500 G & 0.5 ms (Half sine)
Accessories
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INSTALLATION KIT
Not Available
Software
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MANAGEMENT SW
Warranty 4)
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MZ-V9E1T0BW (1TB)
5-year or 600TBW limited warranty
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MZ-V9E2T0BW (2TB)
5-year or 1200 TBW limited warranty