Model Code (Capacity)
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MZ-V9S1T0BW(1TB)
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MZ-V9S2T0BW(2TB)
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MZ-V9S4T0BW(4TB)
General Feature
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Application
Client PCs
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FORM FACTOR
M.2 (2280)
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INTERFACE
PCIe® Gen 4.0 x4 / 5.0 x2 NVMe™ 2.0
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DIMENSION (WxHxD)
80.15 x 22.15 x 2.38mm
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WEIGHT
Max 9.0g Weight
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STORAGE MEMORY
Samsung V-NAND TLC
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CONTROLLER
Samsung in-house Controller
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CACHE MEMORY
HMB(Host Memory Buffer)
Special Feature
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TRIM Support
Supported
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S.M.A.R.T Support
Supported
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GC (GARBAGE COLLECTION)
Auto Garbage Collection Algorithm
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ENCRYPTION SUPPORT
AES 256-bit Encryption (Class 0) TCG/Opal
IEEE1667 (Encrypted drive) -
WWN SUPPORT
Not supported
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DEVICE SLEEP MODE SUPPORT
Yes
Performance
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SEQUENTIAL READ
1TB: Up to 7,150 MB/s
2TB: Up to 7,250 MB/s
4TB: Up to 7,250 MB/s -
SEQUENTIAL WRITE
1TB: Up to 6,300 MB/s
2TB: Up to 6,300 MB/s
4TB: Up to 6,300 MB/s -
RANDOM READ (4KB, QD32)
1TB: Up to 850,000 IOPS
2TB: Up to 1,000,000 IOPS
4TB: Up to 1,050,000 IOPS -
RANDOM WRITE (4KB, QD32)
1TB: Up to 1,350,000 IOPS
2TB: Up to 1,350,000 IOPS
4TB: Up to 1,400,000 IOPS
Environment
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AVERAGE POWER CONSUMPTION
(System Level)3)1TB: Average: Read 4.3 W / Write 4.2 W
2TB: Average: Read 4.6 W / Write 4.2 W
4TB: Average: Read 5.5 W / Write 4.8 W -
POWER CONSUMPTION (IDLE)
1TB: Typical 60 mW
2TB: Typical 60 mW
4TB: Typical 60 mW -
POWER CONSUMPTION (DEVICE SLEEP)
1TB: Typical 5mW
2TB: Typical 5mW
4TB: Typical 5mW -
ALLOWABLE VOLTAGE
3.3 V ± 5 % Allowable voltage
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RELIABILITY (MTBF)
1.5 Million Hours Reliability (MTBF)
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OPERATING TEMPERATURE
0 - 70 ℃ Operating Temperature
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Shock
1,500 G & 0.5 ms (Half sine)
Accessories
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INSTALLATION KIT
Not Available
Software
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MANAGEMENT SW
Warranty
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MZ-V9S1T0BW(1TB)
5-year or 600 TBW limited warranty
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MZ-V9S2T0BW(2TB)
5-year or 1200 TBW limited warranty
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MZ-V9S4T0BW(4TB)
5-year or 2400 TBW limited warranty